Semiconductor processing apparatus and magnetron mechanism

ABSTRACT

Embodiments of the present disclosure provide a semiconductor processing apparatus and a magnetron mechanism thereof. The magnetron mechanism is applied to the semiconductor processing apparatus and includes a backplane, an outer magnetic pole, and an inner magnetic pole. The outer magnetic pole is arranged on a bottom surface of the backplane and encloses to form accommodation space. The inner magnetic pole is arranged on the bottom surface of the backplane and located in the accommodation space. The inner magnetic pole can move to change corrosion areas of the target material. The distance between the inner magnetic pole and the outer magnetic pole is always greater than a predetermined distance during the movement. With the semiconductor processing apparatus and the magnetron mechanism thereof of embodiments of the present disclosure can achieve the full target corrosion in a sputtering environment in a high-pressure state.

TECHNICAL FIELD

The present disclosure generally relates to the semiconductor processingtechnology field and, more particularly, to a semiconductor processingapparatus and a magnetron mechanism.

BACKGROUND

In an integrated circuit manufacturing process, the physical vapordeposition (hereinafter referred to as PVD) technology is widely used todeposit related material layers such as different kinds of metal layers,hard masks, etc., due to its advantages of better film consistency,better uniformity, a wider process window, and realizing filling for athrough-hole with a high depth-to-width ratio.

A conventional PVD apparatus generally uses direct current (DC)sputtering or radio frequency (RF) sputtering when preparing a TiN film.A sputtering pressure is in a low-pressure state (0.1 to 10 mTorr). Inthe sputtering environment, process particle contamination is poorlycontrolled. The prepared TiN film is mostly compressive stress and lowdensity. However, in a 14 nm process, the process particle contaminationneeds to be more strictly controlled, and the TiN film is required tohave high density and be tensile stress. In order to satisfy thisrequirement, the PVD apparatus needs to use RF+DC sputtering, and thesputtering pressure needs to be in a high-pressure state (generally 100to 250 mTorr). Under this sputtering condition, the thickness uniformityof the TiN film prepared by the conventional PVD apparatus is poor, andthe conventional PVD apparatus cannot achieve full target corrosion inthe high-pressure state, which may cause the process particles toseriously exceed the standard and cannot meet the process requirementsof the 14 nm process.

SUMMARY

For the disadvantages of the existing method, the present disclosureprovides a semiconductor processing apparatus and a magnetron mechanismthereof, which can realize full target corrosion in a sputteringenvironment in a high-pressure state to effectively control the processparticle contamination by improving the thickness uniformity of the thinfilm.

In an aspect, embodiments of the present disclosure provide a magnetronmechanism, applied to a semiconductor processing apparatus, including abackplane, an outer magnetic pole, and an inner magnetic pole, wherein:

the outer magnetic pole is arranged on a bottom surface of the backplaneand encloses to form accommodation space, the inner magnetic pole isarranged on the bottom surface of the backplane and is located in theaccommodating space, the inner magnetic pole moves to change a corrosionarea of a target material, and a distance between the inner magneticpole and the outer magnetic pole is always greater than a predetermineddistance during movement.

In some embodiments, the inner magnetic pole moves linearly along afirst direction parallel to the bottom surface of the backplane andalternately stops at a plurality of predetermined positions arranged atintervals along the first direction.

In some embodiments, the outer magnetic pole includes an outer arcportion and an inner arc portion, which are connected in series andtogether form the accommodation space. The outer arc portion is locatedon a side of the inner magnetic pole close to an edge of a surface ofthe target material. The inner arc portion is located on a side of theinner magnetic pole close to a center of the surface of the targetmaterial.

The predetermined positions include three positions, which are a firstposition, a second position, and a third position. The second positionis located on a side of the first position close to the outer arcportion, and the third position is located on a side of the firstposition close to the inner arc portion.

In some embodiments, the magnetron mechanism further includes a drivedevice. The drive device is arranged on a top surface of the backplane,connected to the inner magnetic pole, and configured to drive the innermagnetic pole to move.

In some embodiments, the drive device includes a drive source and aconnection member. The drive source is arranged on the top surface ofthe backplane and configured to provide power. One end of the connectionmember is connected to the drive source, and the other end of theconnection member penetrates the backplane and is connected to the innermagnetic pole.

In some embodiments, the drive device further includes a guide rail. Theguide rail is arranged on the top surface of the backplane, and theconnection member is connected to the guide rail and moving along theguide rail.

In some embodiments, the predetermined distance is greater than or equalto 10 mm.

In some embodiments, the inner magnetic pole and the outer magnetic poleare arranged at an unequal interval, and the distance between the innermagnetic pole and the outer magnetic pole ranges from 30 to 60 mm.

In some embodiments, the inner magnetic pole is in a plane helix shape,one end of the inner magnetic pole is close to the center of the surfaceof the target material, and the other end of the inner magnetic pole isclose to the edge of the surface of the target material.

In a second aspect, embodiments of the present disclosure provide asemiconductor processing apparatus, including a process chamber and themagnetron mechanism according to the first aspect. The magnetronmechanism is arranged on the top of the process chamber.

In some embodiments, the magnetron mechanism adopts the magnetronmechanism of embodiments of the present disclosure.

The semiconductor processing apparatus further includes an insulationchamber body and a hollow tube arranged above the process chamber. Theinsulation chamber body is filled with deionized water, the magnetronmechanism is arranged in the insulation chamber body, an isolation boxis arranged on the backplane. The isolation box encloses the drivesource and a connection part of the isolation box with the connectionmember to isolate the drive source and the connection part from thedeionized water in the insulation chamber body.

One end of the hollow tube penetrates through the isolation box and isconnected to the drive source. A first seal member is arranged betweenthe hollow tube and a first through-hole passing through the isolationbox and configured to seal a gap between the hollow tub and the firstthrough-hole. The other end of the hollow tube penetrates the insulationchamber body and extends to outside of the insulation chamber body. Asecond seal member is arranged between the hollow tube and a secondthrough-hole penetrating the insulation chamber body and configured toseal a gap between the hollow tube and the second through-hole. A wireof the drive source is arranged through the hollow tube to be guided tothe outside of the insulation chamber body through the hollow tube.

In some embodiments, the semiconductor processing apparatus furtherincludes an insulation chamber body arranged above the process chamber,deionized water is filled in the insulation chamber body, and themagnetron mechanism is arranged above the insulation chamber body.

The beneficial effects brought by the technical solutions of embodimentsof the present disclosure are as follows.

In the magnetron mechanism of embodiments of the present disclosure, theouter magnetic pole forms the accommodation space on the bottom surfaceof the backplane, and the inner magnetic pole is located in theaccommodation space and can move to change the corrosion areas of thetarget material. In a sputtering environment in a high-pressure state,by changing the corrosion area of the target material by moving theinner magnetic pole, a corresponding position of the target materialthat cannot be corroded during the whole sputtering process due to theinner magnetic pole being fixed at a certain position may be avoided torealize the full target corrosion. Thus, with the magnetron mechanism ofembodiments of the present disclosure, the full target corrosion may berealized in the sputtering environment in the high-pressure state. Thus,the process particle contamination may be effectively controlled byimproving the thickness uniformity of the thin film, which especiallysatisfies the process particle control requirements of the 14 nmprocess.

The semiconductor processing apparatus provided by embodiments of thepresent disclosure, by using the above-mentioned magnetron mechanism ofembodiments of the present disclosure, can realize the full targetcorrosion in the sputtering environment of the high-pressure state.Thus, the process particle contamination may be effectively controlledby improving the thickness uniformity of the thin film, which especiallysatisfies the process particle control requirements of the 14 nmprocess.

Additional aspects and advantages of the present disclosure arepartially described below, and will be apparent from the followingdescription, or may be learned through practice of the presentdisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and/or additional aspects and advantages of the presentdisclosure will become apparent and easy to understand from thefollowing description of embodiments in connection with the accompanyingdrawings, wherein:

FIG. 1 is a schematic structural diagram of a magnetron mechanismaccording to some embodiments of the present disclosure;

FIG. 2 is a schematic enlarged view of region I in FIG. 1 ;

FIG. 3 is a schematic cross-section view of a drive device according toembodiments of the present disclosure;

FIG. 4 is a schematic diagram showing process result comparison with aninternal magnetic pole at different positions according to embodimentsof the present disclosure;

FIG. 5 is a schematic structural diagram of a semiconductor processingapparatus according to embodiments of the present disclosure; and

FIG. 6 is a schematic structural diagram of another semiconductorprocessing apparatus according to embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The present disclosure is described in detail below, and examples ofembodiments of the present disclosure are illustrated in theaccompanying drawings. Same or similar reference numerals refer to sameor similar parts or parts having same or similar functions. In addition,the detailed description of the known technology is omitted if thedescription is not necessary to illustrate the features of the presentdisclosure. Embodiments described below with reference to theaccompanying drawings are exemplary and are only used to explain thepresent disclosure, but are not to be construed as a limitation of thepresent disclosure.

Those skilled in the art may understand that unless otherwise defined,all terms (including technical and scientific terms) used herein havethe same meaning as commonly understood by one of ordinary skill in theart to which the present disclosure belongs. It should also beunderstood that terms, such as those defined in a general dictionary,should be understood to have meanings consistent with their meanings inthe context of the prior art and, unless specifically defined as herein,should not be interpreted in idealistic or overly formal meaning.

The technical solutions of the present disclosure and how the technicalsolutions of the present disclosure solve the above-mentioned technicalproblems will be described in detail below with specific examples.

With reference to FIG. 1 , embodiments of the present disclosure providea magnetron mechanism, which is applied to a semiconductor processingapparatus. The magnetron mechanism includes a backplane 1, an outermagnetic pole 2, and an inner magnetic pole 3. A shape of the backplane1 may be, for example, rectangular and made of metal material. In someembodiments, the backplane 1 can be connected to a rotation drivemechanism (not shown in the figure) of the semiconductor processingapparatus. Driven by the rotary drive mechanism, the backplane 1 canrotate around a vertical centerline of the backplane 1. The verticalcenterline coincides, for example, with a center of a target surface (asindicated by point O in FIG. 1 ). It should be noted that, in practicalapplications, the material and shape of the backplane 1 and theconnection position with the rotation drive mechanism can be designedaccording to the actual situation, which is not particularly limited inembodiments of the present disclosure.

The outer magnetic pole 2 is arranged on a bottom surface of thebackplane 1 and encloses to form accommodation space 4. The outermagnetic pole 2 may have various specific structures. For example, asshown in FIG. 2 , the outer magnetic pole 2 is composed of a pluralityof outer magnets 21 and a plurality of outer magnetic conductive strips22 that connect the plurality of outer magnets 21 in series to form acontinuous line shape arrangement on the bottom surface of the backplane1 and enclose to form the above-mentioned accommodation space 4. Anouter magnetic conductive strip 22, for example, may be made ofstainless steel. A plurality of mounting holes configured to fix theouter magnets 21 are arranged on the outer magnetic conductive strip 22.

The outer magnetic pole 2 may have a plurality of specific arrangementshapes. For example, as shown in FIG. 1 , the outer magnetic pole 2includes an outer arc portion 2 a and an inner arc portion 2 b, whichare connected in series and together form an accommodation space 4. Theouter arc portion 2 a may be located on a side of the inner magneticpole 3 close to an edge of the target surface. The inner arc portion 2 bmay be located on a side of the inner magnetic pole 3 close to thecenter of the target surface. In some embodiments, the outer arc portion2 a and the inner arc portion 2 b may be both in a plane spiral shape.The outer arc portion 2 a and the inner arc portion 2 b may be connectedend to end. The connection may be smoothed. Between two ends of theouter arc portion 2 a and the inner arc portion 2 b that are notconnected, an opening may be provided. It should be noted that, inpractical applications, according to actual process requirements, thespecific arrangement shape of the outer magnetic pole 2 can be freelyset, as long as the accommodation space 4 can be enclosed to accommodatethe inner magnetic poles 3.

The inner magnetic pole 3 may be arranged on the bottom surface of thebackplane 1 and located in the above-mentioned accommodation space 4.The inner magnetic pole 3 may have a plurality of specific structures.For example, the same as the outer magnetic pole 2, the inner magneticpole 3 may be composed of a plurality of inner magnets and a pluralityof inner magnetic conductive stripes configured to connect the pluralityof magnets in series. Thus, a continuous line shape arrangement may beformed on the bottom surface of the backplane 1. The inner magneticconductive strip, for example, may be made of stainless steel. Aplurality of mounting holes configured to fix the inner magnets may bearranged on the inner magnetic conductive strip. The inner magnetic pole3 may have various specific arrangement shapes. For example, as shown inFIG. 1 , the inner magnetic pole 3 is in a plane spiral shape, and oneend of the inner magnetic pole 3 is close to the center of the surfaceof the target material, and the other end of the inner magnetic pole 3is close to the edge of the surface of the target material. That is, twoends of the inner magnetic pole 3 are disconnected, and an opening isprovided therebetween. With such an arrangement, the realization of thefull target corrosion may be facilitated.

Furthermore, the inner magnetic pole 3 can move relative to thebackplane 1 and the outer magnetic pole 2 to change a corrosion area ofthe target. Moreover, a distance between the inner magnetic pole 3 andthe outer magnetic pole 2 may be always greater than a predetermineddistance during the movement. That is, when the inner magnetic pole 3moves in the accommodation space 4, a certain distance must bemaintained between the inner magnetic pole 3 and the outer magnetic pole2. The above-mentioned predetermined distance satisfies that the innermagnetic pole 3 is prevented from colliding with the outer magnetic pole2, and ignition discontinuity of the process chamber of thesemiconductor processing apparatus may be avoided because the innermagnetic pole 3 is too close to the outer magnetic pole 2. Thus, thelowering of the process uniformity caused by the ignition discontinuitymay be avoided to effectively improve the uniformity of the processresult.

In some embodiments, the predetermined distance may be greater than orequal to 10 mm. Within this distance range, the collision between theinner magnetic pole 3 and the outer magnetic pole 2 can be avoided whenthe inner magnetic pole 3 moves, and the ignition discontinuity of theprocess chamber of the semiconductor apparatus caused by the innermagnetic pole 3 being too close to the outer magnetic pole 2 may beeffectively avoided.

In some embodiments, the inner magnetic pole 3 and the outer magneticpole 2 may be arranged at unequal intervals. In addition, the distancebetween the inner magnetic pole 3 and the outer magnetic pole 2 mayrange from 30 to 60 mm. For example, within the above distance range, aspecific spacing value may include a combination of 35 mm, 40 mm, 42 mm,48 mm, 53 mm, 55 mm, 58 mm, and 60 mm. However, embodiments of thepresent disclosure are not limited to this, as long as full targetcorrosion can be achieved. It should be noted that, in practicalapplications, the inner magnetic pole 3 and the outer magnetic pole 2may also be arranged at equal intervals to be suitable for anotherprocess environment. Therefore, embodiments of the present disclosureare not limited to this, and those skilled in the art can adjust thesettings by themselves according to different work conditions.

It should be noted that, in practical applications, by satisfying theabove condition, the specific arrangement shape of the inner magneticpole 3 can be freely set according to actual process requirements.

In the sputtering environment (RF+DC sputtering) with a high-pressurestate (generally 100 to 250 mTorr), although the thickness uniformity ofthe film can be improved, serious reverse sputtering may occur at acorresponding position directly under the position where the innermagnetic pole 3 is located on the surface of the target. The reversesputtering may cause the corresponding position to be unable to becorroded. Thus, particles in an area of the target that is more corrodedmay be deposited in the area that cannot be corroded to cause theprocess particles to seriously exceed the standard. In order to solvethe above problems, the corrosion area of the target may be changed bymoving the inner magnetic pole 3, which can avoid that the correspondingposition of the target cannot be corroded during the whole sputteringprocess because the inner magnetic pole 3 is fixed at a certainposition. Thus, the full target corrosion can be achieved. Therefore,the magnetron mechanism of embodiments of the present disclosure canrealize the full target corrosion in a high-pressure sputteringenvironment. Thus, the process particle contamination may be effectivelycontrolled by improving the thickness uniformity of the film, whichespecially satisfies the process particle control requirements of the 14nm process.

In an embodiment of the present disclosure, as shown in FIG. 1 , theinner magnetic pole 3 moves linearly along a first direction (Ydirection shown in FIG. 1 ) parallel to the bottom surface of thebackplane 1, and alternately stay at a plurality of predeterminedpositions arranged at intervals along the first direction. By making theinner magnetic pole 3 move linearly, the movement mode of the innermagnetic pole 3 may be simplified and easy to realize, and maintaining acertain distance between the inner magnetic pole 3 and the outermagnetic pole 2 as a whole may be beneficial to realize. Thus, the innermagnetic pole 3 may be prevented from colliding with the outer magneticpole 2 during the movement, and the ignition discontinuity of theprocess chamber of the semiconductor apparatus may be effectivelyavoided due to the inner magnetic pole 3 being too close to the outermagnetic pole 2.

In an embodiment of the present disclosure, as shown in FIG. 1 , on thebasis that the outer magnetic pole 2 adopts the shape shown in FIG. 1 ,three above-mentioned predetermined positions are provided, whichinclude a first position P1, a second position P2, and a third positionP3. The three positions are arranged at intervals along theabove-mentioned first direction. Second position P2 is located on a sideof first position P1 close to the outer arc portion 2 a. Third positionP3 is located on a side of first position P1 close to the inner arcportion 2 b. The inner magnetic pole 3 can be switched between theabove-mentioned three predetermined positions along the first direction(i.e., the Y direction in FIG. 1 ). When the inner magnetic pole 3 islocated at first position P1, the inner magnetic pole 3 may be locatedat a position close to a middle position between the outer arc portion 2a and the inner arc portion 2 b. When the inner magnetic pole 3 islocated at second position P2, the inner magnetic pole 3 may be locatedat a position close to the inner arc portion 2 b. When the innermagnetic pole 3 is located at third position P3, the inner magnetic pole3 may be located at a position close to the outer arc portion 2 a. Thus,at different positions, the inner magnetic pole 3 may correspond todifferent areas that cannot be corroded on the surface of the target. Byswitching the inner magnetic pole 3 between the above threepredetermined positions, the area that cannot be corroded correspondingto each predetermined position may be corroded when the inner magneticpole 3 moves to another predetermined position to realize the fulltarget corrosion.

To facilitate the description of embodiments of the present disclosure,a description is made in connection with a specific embodiment of thepresent disclosure. A dotted line area 6 shown in FIG. 1 represents anarea covered by the magnetron mechanism of embodiments of the presentdisclosure during rotation, that is, the target corrosion area. Withreference to FIG. 1 and the following table 1, when the inner magneticpole 3 is located at first position P1, three non-corroded areas on thesurface of the target are provided correspondingly. Radius ranges of thethree areas are R1 (35 to 50 mm), R2 (102 to 110 mm), and R3 (140 to 150mm). When the inner magnetic pole 3 is located at second position P2,two non-corroded areas on the surface of the target are providedcorrespondingly, and radius ranges of the two areas are R2 (90 to 100mm) and R3 (145 to 160 mm). When the inner magnetic pole 3 is located atthird position P3, two non-corroded areas on the surface of the targetare provided correspondingly, and the radius ranges of the two areas areR1 (30 to 50 mm) and R2 (105 to 125 mm).

TABLE 1 Correspondence table between the position of the inner magneticpole and the non-corroded area on the surface of the target. Position ofNon-corroded Area Inner Magnetic Pole R1(mm) R2(mm) R3(mm) Firstposition P1 35~50 102~110 140~150 Second position P2 —  90~100 145~160Third position P3 30~50 105~125 —

It can be seen from the above that when the inner magnetic pole 3 islocated at second position P2, the non-corroded areas with radius rangesR1 and R2 corresponding to first position P1 and third position P3 canbe corroded. When the inner magnetic pole 3 is located at third positionP3, the non-etched area corresponding to second position P2 with aradius range R3 may be corroded. Therefore, by switching the innermagnetic pole 3 between the above-mentioned three predeterminedpositions, the areas corresponding to each predetermined position thatcannot be corroded can be corroded when the inner magnetic pole 3 ismoved to another predetermined position to realize the full targetcorrosion.

FIG. 4 is a schematic diagram showing process result comparison with aninternal magnetic pole at different positions according to embodimentsof the present disclosure. As shown in FIG. 4 , thickness uniformitiesof the films obtained by performing the process by fixing the innermagnetic pole 3 fixed at the above three predetermined positions are2.1%, 3.00%, and 1.88%, respectively. All three are within 3.00%. Basedon this, in the process of performing the process, by switching theinner magnetic pole 3 between the above three predetermined positions,the thickness uniformity of the film can be increased to 1.58%, which isobviously better than 3% to further improve the thickness uniformity ofthe film.

It should be noted that embodiments of the present disclosure do notlimit the above-mentioned first direction and a specific number of theabove-mentioned predetermined positions. For example, theabove-mentioned first direction is not limited to Y direction in FIG. 1and can be a direction having any included angle with Y direction. Inpractical applications, the first direction and the specific numbers ofthe predetermined positions can be adjusted and set according to thearrangement of the outer magnetic pole 2 and the inner magnetic pole 3and the distance between the outer magnetic pole 2 and the innermagnetic pole 3. Therefore, embodiments of the present disclosure arenot limited to this, and those skilled in the art can adjust thesettings according to the actual situation.

In an embodiment of the present disclosure, as shown in FIG. 3 , themagnetron mechanism further includes a drive device 5. The drive device5 is located on one side of a top surface of the backplane 1, connectedto the inner magnetic pole 3, and configured to drive the inner magneticpole 3 to move. With the drive device 5, automatic control of themovement of the inner magnetic pole 3 can be realized during performingthe process. Of course, in practical applications, embodiments of thepresent disclosure are not limited to this, the inner magnetic pole 3can also be driven to move in a manual control manner.

In an embodiment of the present disclosure, the drive device 5 mayinclude a drive source 51 and a connection member 52. The drive source51 is arranged on the top surface of the backplane 1 and configured toprovide power. One end of the connection member 52 may be connected tothe drive source 51. The other end of the connection member 52penetrates the backplane 1 and is connected to the inner magnetic pole3. In some embodiments, the drive device 5 may further include a guiderail (not shown in the figure). The guide rail may be arranged on thetop surface of the backplane 1. The connection member 52 may beconnected to the guide rail and can move along the guide rail. With theaid of the above-mentioned guide rail, the movement of the connectionmember 52 can be guided to ensure the movement accuracy of the innermagnetic pole 3. It should be noted that the backplane 1 may have ahollow structure at the position where the connection member 52 passesthrough. The size of the hollow structure may be adapted to a movementrange of the connection member 52 to ensure that the movement of theconnector 52 does not interfere.

In an embodiment of the present disclosure, the drive source 51 may be astepping motor, which is configured to control a displacement of theconnection member 52 through a signal to further improve the movementaccuracy of the inner magnetic pole 3. Of course, in practicalapplications, the drive source 51 may also be a servo motor or a leadscrew motor. By using different types of drive sources, an applicationscope of embodiments of the present disclosure may be effectivelyexpanded to effectively reduce application and maintenance costs.

In summary, in the magnetron mechanism of embodiments of the presentdisclosure, the outer magnetic pole may form an accommodation space onthe bottom surface of the backplane, and the inner magnetic pole may belocated in the accommodation space and move to change the corroded areaof the target material. In a high-pressure sputtering environment, thecorroded area of the target material may be changed by moving the innermagnetic pole, which can avoid that the corresponding position of thetarget material cannot be corroded during the whole sputtering processwhen the inner magnetic pole is fixed at a certain position. Thus, thefull target corrosion can be realized. Therefore, the magnetronmechanism of embodiments of the present disclosure can realize the fulltarget corrosion in the sputtering environment in the high-pressurestate. Thus, the process particle contamination may be effectivelycontrolled by improving the thickness uniformity of the film, whichespecially satisfies the process particle control requirements of the 14nm process.

Based on the same inventive concept, embodiments of the presentdisclosure provide a semiconductor processing apparatus, including aprocess chamber. For example, with reference to FIG. 5 , the processchamber includes a chamber body 100. A vacuum pump system 101 isconnected to the bottom of the chamber body 100, which is configured toevacuate the chamber body 100 to reach a determined degree of vacuum(e.g., 10 to 6 Torr) in the chamber body. In addition, a gas inletpipeline is connected to one side of the chamber body 100. Angas inletend of the gas inlet pipeline is connected to a gas source 103 andconfigured to transmit the reaction gas (such as argon, nitrogen, etc.)to the inside of the reaction chamber 1. In addition, a flow meter 102is arranged at the gas inlet pipeline and configured to control a gasinlet amount of the reaction gas.

Moreover, a base 104 may be arranged inside the chamber body 100 andconfigured to carry a wafer 110. The base 104 may have heating and/orcooling functions. The base 104 may be electrically connected to a biaspower supply 119 to apply a bias power to the base 104 to change theparticle energy and plasma sheath thickness on the surface of thesubstrate. Thus, the stress and density of the film may be improved. Inaddition, an inner liner 112 may be arranged around an inner side of asidewall of the chamber body 100. When the base 104 is located below theprocess position, the bottom of the inner liner 112 may carry a pressurering 111. The pressure ring 111 may be configured to press an edge areaof the wafer 110 when the base 104 is located at the process position.

The target material 105 may be arranged inside the chamber body 100 andlocated above the base 104. The target material 105 may be prepared byusing a metal material or a metal compound material. In addition, aninsulating chamber body 106 may be arranged above the chamber body 100,The insulation chamber body 106 may be filled with deionized water 107.In addition, an annular current expansion electrode 113 may be arrangedon an inner side of the sidewall of the insulation chamber body 106. Theannular current expansion electrode 113 may be electrically connected tothe target material 105, and electrodes of the upper RF power supply 118and the DC power supply 117 and configured to apply RF power and DCpower to the target material to obtain a co-sputtering environment of RFand DC. A plasma 114 may be formed inside the chamber body 100.

In addition, the magnetron mechanism may be arranged above the targetmaterial 105 and located in the insulation chamber body 106. Themagnetron mechanism may adopt the magnetron mechanism of theabove-mentioned embodiments. For example, in the present embodiment, themagnetron mechanism may be arranged on the top of the chamber body 100of the process chamber and located in the above-mentioned insulationchamber body 106. With the aid of the magnetron mechanism 108, thesputtering deposition rate can be effectively increased.

Taking the magnetron mechanism shown in FIG. 3 as an example, themagnetron mechanism includes a backplane 1, an outer magnetic pole 2, aninner magnetic pole 3, a drive source 51, and a connection member 52. Anisolation box 116 is arranged on the backplane 1. The isolation box 116encloses the drive source 51 and the connection part of the drive source51 with the connection member 52 to isolate the drive source 51 and theconnection part of the drive source 51 with the connection member 52from the deionized water 107 in the insulation chamber body 106.Moreover, a wire of the drive source 51 may be led out of the insulationchamber body 106 through a hollow tube 115 to be connected to a powersource. Specifically, one end of the hollow tube 115 passes through theisolation box 116 and is connected to the drive source 51. A first sealmember is arranged between the hollow tube 115 and the firstthrough-hole passing through the isolation box 116 and configured toseal a gap between the hollow tube 115 and the first through-hole. Theother end of the hollow tube 115 passes through the insulation chamberbody 106 and extends to the outside of the insulation chamber body 106.A second seal member is arranged between the hollow tube 115 and thesecond through-hole passing through the insulation chamber body 106 andconfigured to seal a gap between the hollow tube 115 and the secondthrough-hole. The wire of the drive source 51 is arranged through thehollow tube 115 and is led to the outside of the insulation chamber body106 through the hollow tube 115.

In addition, the backplane 1 may be connected to the rotation drivesource 109. Specifically, the drive shaft of the rotation drive source109 may penetrate the insulation chamber body 106, extend to the insideof the insulation chamber body 106, be connected to the backplane 1 ofthe magnetron mechanism, and be configured to drive the inner and outermagnetic poles on the backplane 1 to rotate synchronously by driving thebackplane 1. In some embodiments, a magnetic fluid bearing can beconfigured to seal the gap between the drive shaft of the rotation drivesource 109 and the through-hole penetrating the insulation chamber body106 to ensure that the drive shaft of the rotation drive source 109 canrotate, and the inside of the insulation chamber body 106 can be sealed.By using the rotation drive source 109 to drive the magnetron mechanismto rotate, a time-homogenized magnetic field can be generated at variousangles in the circumferential direction of the chamber body 100 toachieve a more uniform sputtering shape of the target material toimprove the uniformity of film deposition.

It should be noted that, in this embodiment, the above-mentionedmagnetron mechanism may be arranged in the insulation chamber body 106.However, embodiments of the present disclosure are not limited to this.For example, as shown in FIG. 6 , the magnetron mechanism is furtherarranged outside the insulation chamber body 106 and located above theinsulation chamber body 106. In this situation, the wire of the drivesource 51 can be connected to the power supply in a conventional manner.Other structures of the semiconductor processing apparatus shown in FIG.6 are the same as those of the semiconductor processing apparatus shownin FIG. 5 .

It should be noted that, in practical applications, for theabove-mentioned magnetron mechanism, the setting position and thesetting manner of the magnetron mechanism can be adaptively adjustedaccording to the semiconductor processing apparatuses of differentstructures, which is not particularly limited in embodiments of thepresent disclosure.

With the semiconductor processing apparatus of embodiments of thepresent disclosure, by using the above-mentioned magnetron mechanism ofembodiments of the present disclosure, the full target corrosion may berealized in the sputtering environment in the high-pressure state. Thus,the thickness uniformity of the thin film may be improved, and theprocess particle contamination may be effectively controlled, which canespecially satisfy the process particle control requirements of the 14nm process.

It can be understood that the above embodiments are only exemplaryembodiments adopted to illustrate the principle of the presentdisclosure, but the present disclosure is not limited to this. For thoseof ordinary skill in the art, without departing from the spirit andessence of the present disclosure, various modifications andimprovements can be made, and these modifications and improvements arealso within the protection scope of the present disclosure.

In the description of the present disclosure, it should be understoodthat the orientation or positional relationship indicated by the terms“center,” “upper,” “lower,” “front,” “rear,” “left,” “right,”“vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” etc., arebased on the orientation or positional relationship shown in thedrawings and are only to facilitate describing the present disclosureand simplifying the description, rather than indicating or implying thatthe referred device or element must have a particular orientation and beconstructed and operated in a particular orientation, which should notbe construed as a limitation of the present disclosure.

The terms “first” and “second” are only used for descriptive purposes,and should not be construed as indicating or implying relativeimportance or implicitly indicating the number of indicated technicalfeatures. Thus, a feature defined as “first” or “second” may expresslyor implicitly include one or more of the features. In the description ofthe present disclosure, unless otherwise specified, “a plurality of”means two or more.

In the description of the present disclosure, it should be noted thatthe terms “installed,” “connected,” and “coupled” should be understoodin a broad sense, unless otherwise expressly specified and limited, forexample, which includes a fixed connection or a detachable connection,or integral connection, and also includes a direct connection, or anindirect connection through an intermediate medium, and the internalcommunication of two elements. For those of ordinary skill in the art,the specific meanings of the above terms in the present disclosure canbe understood in specific situations.

In the description of the present specification, the particularfeatures, structures, materials, or characteristics may be combined inany suitable manner in any one or more embodiments or examples.

The above are only some embodiments of the present disclosure. It shouldbe pointed out that for those of ordinary skill in the art, withoutdeparting from the principles of the present disclosure, severalimprovements and modifications can also be made. These improvements andmodifications should be within the protection scope of the presentdisclosure.

1. A magnetron mechanism, applied to a semiconductor processingapparatus, comprising: a backplane; an outer magnetic pole arranged on abottom surface of the backplane and enclosing to form accommodationspace; and an inner magnetic pole arranged on the bottom surface of thebackplane and located in the accommodating space, the inner magneticpole moving to change a corrosion area of a target material, and adistance between the inner magnetic pole and the outer magnetic polebeing always greater than a predetermined distance during movement. 2.The magnetron mechanism according to claim 1, wherein the inner magneticpole moves linearly along a first direction parallel to the bottomsurface of the backplane and alternately stops at a plurality ofpredetermined positions arranged at intervals along the first direction.3. The magnetron mechanism according to claim 2, wherein: the outermagnetic pole includes: an outer arc portion located on a side of theinner magnetic pole close to an edge of a surface of the targetmaterial; and an inner arc portion located on a side of the innermagnetic pole close to a center of the surface of the target material,the outer arc portion and the inner arc portion being connected inseries and together form the accommodation space; the predeterminedpositions include a first position, a second position, and a thirdposition, the second position being located on a side of the firstposition close to the outer arc portion, and the third position beinglocated on a side of the first position close to the inner arc portion.4. The magnetron mechanism according to claim 1, wherein the magnetronmechanism further includes a drive device, the drive device beingarranged on a top surface of the backplane, connected to the innermagnetic pole, and configured to drive the inner magnetic pole to move.5. The magnetron mechanism according to claim 4, wherein the drivedevice includes: a drive source arranged on the top surface of thebackplane and configured to provide power; and a connection member, oneend of the connection member being connected to the drive source, andthe other end of the connection member penetrating the backplane andbeing connected to the inner magnetic pole.
 6. The magnetron mechanismaccording to claim 5, wherein the drive device further includes: a guiderail arranged on the top surface of the backplane, and the connectionmember being connected to the guide rail and moving along the guiderail.
 7. The magnetron mechanism according to claim 1, wherein thepredetermined distance is greater than or equal to 10 mm.
 8. Themagnetron mechanism according to claim 1, wherein: the inner magneticpole and the outer magnetic pole are arranged at an unequal interval;and the distance between the inner magnetic pole and the outer magneticpole ranges from 30 to 60 mm.
 9. The magnetron mechanism according toclaim 1, wherein: the inner magnetic pole is in a plane helix shape; oneend of the inner magnetic pole is close to the center of the surface ofthe target material; and the other end of the inner magnetic pole isclose to the edge of the surface of the target material.
 10. Asemiconductor processing apparatus comprising: a process chamber; and amagnetron mechanism arranged on the top of the process chamber andincluding: a backplane; an outer magnetic pole arranged on a bottomsurface of the backplane and enclosing to form accommodation space; andan inner magnetic pole arranged on the bottom surface of the backplaneand located in the accommodating space, the inner magnetic pole movingto change a corrosion area of a target material, and a distance betweenthe inner magnetic pole and the outer magnetic pole being always greaterthan a predetermined distance during movement.
 11. The semiconductorprocessing apparatus according to claim 10, further comprising: aninsulation chamber body filled with deionized water, the magnetronmechanism being arranged in the insulation chamber body, an isolationbox being arranged on the backplane, and the isolation box enclosing thedrive source and a connection part of the isolation box with theconnection member to isolate the drive source and the connection partfrom the deionized water in the insulation chamber body; and a hollowtube arranged above the process chamber, one end of the hollow tubepenetrating through the isolation box and being connected to the drivesource, and a first seal member being arranged between the hollow tubeand a first through-hole passing through the isolation box andconfigured to seal a gap between the hollow tub and the firstthrough-hole, the other end of the hollow tube penetrating theinsulation chamber body and extends to outside of the insulation chamberbody, a second seal member being arranged between the hollow tube and asecond through-hole penetrating the insulation chamber body andconfigured to seal a gap between the hollow tube and the secondthrough-hole, and a wire of the drive source being arranged through thehollow tube to be guided to the outside of the insulation chamber bodythrough the hollow tube.
 12. The semiconductor processing apparatusaccording to claim 10, further comprising: an insulation chamber bodyarranged above the process chamber and filled with deionized water, themagnetron mechanism being arranged above the insulation chamber body.13. The semiconductor processing apparatus according to claim 10,wherein the inner magnetic pole moves linearly along a first directionparallel to the bottom surface of the backplane and alternately stops ata plurality of predetermined positions arranged at intervals along thefirst direction.
 14. The semiconductor processing apparatus according toclaim 13, wherein: the outer magnetic pole includes: an outer arcportion located on a side of the inner magnetic pole close to an edge ofa surface of the target material; and an inner arc portion located on aside of the inner magnetic pole close to a center of the surface of thetarget material, the outer arc portion and the inner arc portion beingconnected in series and together form the accommodation space; thepredetermined positions include a first position, a second position, anda third position, the second position being located on a side of thefirst position close to the outer arc portion, and the third positionbeing located on a side of the first position close to the inner arcportion.
 15. The semiconductor processing apparatus according to claim10, wherein the magnetron mechanism further includes a drive device, thedrive device being arranged on a top surface of the backplane, connectedto the inner magnetic pole, and configured to drive the inner magneticpole to move.
 16. The semiconductor processing apparatus according toclaim 15, wherein the drive device includes: a drive source arranged onthe top surface of the backplane and configured to provide power; and aconnection member, one end of the connection member being connected tothe drive source, and the other end of the connection member penetratingthe backplane and being connected to the inner magnetic pole.
 17. Thesemiconductor processing apparatus according to claim 16, wherein thedrive device further includes: a guide rail arranged on the top surfaceof the backplane, and the connection member being connected to the guiderail and moving along the guide rail.
 18. The semiconductor processingapparatus according to claim 10, wherein the predetermined distance isgreater than or equal to 10 mm.
 19. The semiconductor processingapparatus according to claim 1, wherein: the inner magnetic pole and theouter magnetic pole are arranged at an unequal interval; and thedistance between the inner magnetic pole and the outer magnetic poleranges from 30 to 60 mm.
 20. The semiconductor processing apparatusaccording to claim 1, wherein: the inner magnetic pole is in a planehelix shape; one end of the inner magnetic pole is close to the centerof the surface of the target material; and the other end of the innermagnetic pole is close to the edge of the surface of the targetmaterial.